Titanium distribution in Ti-sapphire single crystals grown by Czochralski and Verneuil technique - Archive ouverte HAL Access content directly
Journal Articles Optical Materials Year : 2016

Titanium distribution in Ti-sapphire single crystals grown by Czochralski and Verneuil technique

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Abstract

The distributions of Ti3+ and Ti4+ ions were evaluated by photoluminescence measurement in the wafers cut from different positions of the ingots grown by Czochralski and Verneuil techniques. Particular radial distributions of Ti4+ as function of the position in the ingot were observed in the crystals grown by Verneuil technique different than the crystals grown by Czochralski method.
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Dates and versions

hal-02304935 , version 1 (03-10-2019)

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Guillaume Alombert-Goget, Hui Li, J. Faria, S. Labor, D. Guignier, et al.. Titanium distribution in Ti-sapphire single crystals grown by Czochralski and Verneuil technique. Optical Materials, 2016, 51, pp.1-4. ⟨10.1016/j.optmat.2015.11.016⟩. ⟨hal-02304935⟩
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