Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector - Université Claude Bernard Lyon 1 Accéder directement au contenu
Article Dans Une Revue Semiconductors Année : 2016

Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector

Résumé

In this paper we present the trapping of photogenerated charge carriers for 300 s resulted by their direct exchange under illumination between a few silicon nanocrystals (ncs-Si) embedded in an oxide tunnel layer (SiOx = 1.5) and the tunnel oxide traps levels for a single electron photodetector (photo-SET or nanopixel). At first place, the presence of a photocurrent limited in the inversion zone under illumination in the I–V curves confirms the creation of a pair electron/hole (e–h) at high energy. This photogenerated charge carriers can be trapped in the oxide. Using the capacitance-voltage under illumination (the photo-CV measurements) we show a hysteresis chargement limited in the inversion area, indicating that the photo-generated charge carriers are stored at traps levels at the interface and within ncs-Si. The direct exchange of the photogenerated charge carriers between the interface traps levels and the ncs-Si contributed on the photomemory effect for 300 s for our nanopixel at room temperature.
Fichier non déposé

Dates et versions

hal-01701401 , version 1 (05-02-2018)

Identifiants

Citer

S. Chattbouri, M. Troudi, N. Sghaier, A. Kalboussi, Vincent Aimez, et al.. Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector. Semiconductors, 2016, 50, pp.1163. ⟨10.1134/S1063782616090062⟩. ⟨hal-01701401⟩
60 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More