Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes - Université Claude Bernard Lyon 1 Accéder directement au contenu
Article Dans Une Revue Materials Science Forum Année : 2013

Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes

Résumé

10 kV class 4H-SiC bipolar diodes have been fabricated. Two different edge terminations (Mesa/JTE or MESA/JTE with JTE rings) with two different junction bend radius have been designed and tested. Measurement results show that the inclusion of JTE rings improve the edge termination efficiency. The measurements indicate also a better reverse performance of diodes with larger bend radius.

Dates et versions

hal-01627801 , version 1 (02-11-2017)

Identifiants

Citer

Duy Minh Nguyen, Runhua Huang, Luong Viet Phung, Dominique Planson, Maxime Berthou, et al.. Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes. Materials Science Forum, 2013, 740-742, pp.609 - 612. ⟨10.4028/www.scientific.net/MSF.740-742.609⟩. ⟨hal-01627801⟩
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