Seed orientation and pulling rate effects on bubbles and strain distribution on a sapphire crystal grown by the micro-pulling down method - Archive ouverte HAL Access content directly
Journal Articles CrystEngComm Year : 2019

Seed orientation and pulling rate effects on bubbles and strain distribution on a sapphire crystal grown by the micro-pulling down method

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Abstract

Undoped sapphire rod crystals (ϕ = 3 mm, length ≈ 170 mm) along different crystallographic orientations (a [11[2 with combining macron]0], m [10[1 with combining macron]0], c [0001] and c [0001] shifted 30° off axis) were successfully grown by the micro-pulling down (μ-PD) method. The bubble defect distribution was investigated as a function of the thermal gradient and pulling rates. It is observed that sapphire rods grown at a low pulling rate (v < 200 μm min−1) were bubble-free. A homogeneous temperature distribution around the capillary die will limit the bubble propagation. Pulling sapphire rods along the c-axis is a good way to minimize the bubble propagation. The effects of growth parameters on bubble and strain distribution in sapphire rods grown from μ-PD rods were discussed.
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Dates and versions

hal-02367589 , version 1 (18-11-2019)

Identifiers

Cite

Rekia Bouaita, G. Alombert-Goget, E. Ghezal, A. Nehari, Omar Benamara, et al.. Seed orientation and pulling rate effects on bubbles and strain distribution on a sapphire crystal grown by the micro-pulling down method. CrystEngComm, 2019, 21 (28), pp.4200-4211. ⟨10.1039/c9ce00510b⟩. ⟨hal-02367589⟩
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