Radioluminescence Sensitization in Scintillators and Phosphors: Trap Engineering and Modeling - Archive ouverte HAL Access content directly
Journal Articles Journal of Physical Chemistry C Year : 2014

Radioluminescence Sensitization in Scintillators and Phosphors: Trap Engineering and Modeling

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Abstract

The role of charge carrier trapping in determining radioluminescence (RL) efficiency increase during prolonged irradiation of scintillators has been studied by using YPO4:Ce,Nd as a model material. The Nd3+ ions act as efficient electron traps minimizing the role of intrinsic defects. Different Nd contents were considered in order to point out the correlation between the trap concentration and the detected RL efficiency dose dependence. RL measurements as a function of temperature clarified the role of the trap thermal stability in determining the shape and the magnitude of such effect. We propose also a model based on trap filling which is able to describe accurately the complex processes which are involved.
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Dates and versions

hal-02309838 , version 1 (09-10-2019)

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Federico Moretti, Gaël Patton, Andrei Belsky, M. Fasoli, A. Vedda, et al.. Radioluminescence Sensitization in Scintillators and Phosphors: Trap Engineering and Modeling. Journal of Physical Chemistry C, 2014, 118, pp.9670-9676. ⟨10.1021/jp501717z⟩. ⟨hal-02309838⟩
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