Formation of submicrometer pore arrays by electrochemical etching of silicon and nanoimprint lithography - Université Claude Bernard Lyon 1 Accéder directement au contenu
Article Dans Une Revue Journal of The Electrochemical Society Année : 2011

Formation of submicrometer pore arrays by electrochemical etching of silicon and nanoimprint lithography

Résumé

This work describes the formation of submicrometer pore arrays using nanoimprint lithography and photoelectrochemical etching of n-type silicon in a hydrofluoric acid electrolyte. This work highlights more specifically the link between silicon resistivity and pore geometry. A properly chosen silicon resistivity is shown to ensure a stable pore growth and to limit damages in pore walls due to electrical breakdown and photogenerated carrier diffusion. Well ordered pore arrays with a depth up to 20 µm and a period of 1 µm, 750 nm, and 500 nm have been fabricated using silicon wafers with resistivities of 0.76, 0.35, and 0.15 Ω cm, respectively.
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Dates et versions

hal-00621082 , version 1 (28-09-2022)

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Guillaume Laffite, Marilyne Roumanie, Cécile Gourgon, Corinne Perret, Jumana Boussey, et al.. Formation of submicrometer pore arrays by electrochemical etching of silicon and nanoimprint lithography. Journal of The Electrochemical Society, 2011, 158 (1), pp.D10-D14. ⟨10.1149/1.3514584⟩. ⟨hal-00621082⟩
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