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Communication Dans Un Congrès Année : 2010

Fabrication and Testing of 4H-SiC MESFETs for Analog Functions Circuits

Résumé

Lateral normally-on dual gates MESFETs withstanding a drain/source voltage in excess of 200V have been fabricated on semi-insulating 4H-SiC substrate. This paper reports on the fabrication, DC characterization and in-circuit behavior of the MESFETs. Temperature dependent DC characterization has been carried out up to 473K. The performances of basic analog circuits such as an amplifier and a clock, using these MESFETs, are detailed and analyzed.

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Dates et versions

hal-00496985 , version 1 (02-07-2010)

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Arnaud Devie, Dominique Tournier, Philippe Godignon, Miquel Vellvehi, Josep Montserrat, et al.. Fabrication and Testing of 4H-SiC MESFETs for Analog Functions Circuits. CSCRM, Oct 2009, Nuremberg, Germany. pp.1159-1162, ⟨10.4028/www.scientific.net/MSF.645-648.1159⟩. ⟨hal-00496985⟩
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