A Comparative Study of the EBIC Contrast and Gettering Efficiency of the Tilt Boundaries Σ= 25, Σ= 13 and Σ= 9 in Silicon Bicrystals - Equipe NIMPH du CIMAP - Nanomatériaux, Ions et Métamatériaux pour la PHotonique Accéder directement au contenu
Article Dans Une Revue Journal de Physique III Année : 1995

A Comparative Study of the EBIC Contrast and Gettering Efficiency of the Tilt Boundaries Σ= 25, Σ= 13 and Σ= 9 in Silicon Bicrystals

A. Ihlal
  • Fonction : Auteur
R. Rizk
  • Fonction : Auteur
P. Voivenel
  • Fonction : Auteur
G. Nouet
  • Fonction : Auteur

Résumé

Electron Beam Induced Current (EBIC) measurements have been performed on Σ= 25, Σ= 13 and Σ= 9 silicon bicrystals, aiming at the study of the recombining activity of nickel precipitates in these materials, together with a comparative study of the gettering efficiencies of the related Grain Boundaries (GBs). The various aspects of the EBIC contrasts such as their strength and nature (uniform, uniform and dotted or dotted only) have been correlated to the microstructure of the interfaces, which govern the size and distribution of the NiSi2 precipitates. On the other hand, the appearance and the extent of a denuded zone on either side of the GB have been both associated with the gettering efficiency of each of GB-type, which was found to account for the corresponding free-energy of the GB as theoretically calculated in the literature.

Domaines

Articles anciens
Fichier principal
Vignette du fichier
ajp-jp3v5p1371.pdf (818.66 Ko) Télécharger le fichier
Origine : Accord explicite pour ce dépôt

Dates et versions

jpa-00249387 , version 1 (04-02-2008)

Identifiants

Citer

A. Ihlal, R. Rizk, P. Voivenel, G. Nouet. A Comparative Study of the EBIC Contrast and Gettering Efficiency of the Tilt Boundaries Σ= 25, Σ= 13 and Σ= 9 in Silicon Bicrystals. Journal de Physique III, 1995, 5 (9), pp.1371-1382. ⟨10.1051/jp3:1995197⟩. ⟨jpa-00249387⟩
29 Consultations
57 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More