Transformations in the photoluminescent, electrical and structural properties of Tb3+ and Eu3+ co-doped ZnO films under high-temperature annealing - Equipe NIMPH du CIMAP - Nanomatériaux, Ions et Métamatériaux pour la PHotonique Accéder directement au contenu
Article Dans Une Revue Journal of Luminescence Année : 2020

Transformations in the photoluminescent, electrical and structural properties of Tb3+ and Eu3+ co-doped ZnO films under high-temperature annealing

Résumé

The effect of thermal annealing on optical, electrical and structural properties of Tb and Eu co-doped ZnO films grown by magnetron sputtering on Si and Al2O3 substrates was investigated by X-ray diffraction, photoluminescence, micro-Raman and IR reflection methods. It is shown that incorporation of rare earth ions in ZnO is accompanied by the formation of intrinsic defects. The as-deposited and annealed at 600 °C films demonstrate Tb3+ emission and no Eu3+ one. Higher intensity of Tb3+ photoluminescence in the films on Al2O3 substrate as compared with that on Si is ascribed to higher content of Tb3+ emitting centers. The model of these centers including the substitutional Tb and interstitial oxygen is proposed. In the excitation spectra of Tb3+ emission, no features connected with light absorption in ZnO are observed. An annealing at 900 °C is found to result in the formation of crystalline terbium oxide and silicate phases. In the photoluminescence spectra, the decrease of Tb3+ emission and the appearance of two sets of Eu3+ related bands caused by energy transfer from Tb3+ to Eu3+ ions are found. This is ascribed to segregation of rare earth ions in the additional phases and the decrease of the distance between the ions.
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Dates et versions

hal-02305308 , version 1 (04-10-2019)

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N. Korsunska, L. Borkovska, L. Khomenkova, O. Gudymenko, V. Kladko, et al.. Transformations in the photoluminescent, electrical and structural properties of Tb3+ and Eu3+ co-doped ZnO films under high-temperature annealing. Journal of Luminescence, 2020, 217, pp.116739. ⟨10.1016/j.jlumin.2019.116739⟩. ⟨hal-02305308⟩
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